Nevertheless, the microscopic understanding of defect-related modifications remains elusive due to a lack of thorough correlation between atomic structure and resulting macroscopic electronic and optical properties. For two-dimensional van der Waals semiconductors, the term “defect engineering” has been coined to suggest that, by introducing defects, these materials can be engineered beyond the established concepts of doping or alloying 1, enabling advanced functionality, such as single photon sources 2, 3 or photocatalysis with chemical specificity 1. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.Ĭontrol over atomic defects is the foundation of today’s semiconductor technology. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. The defect generation rate, atomic imaging and the optical signatures support this claim. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS 2. Nature Communications volume 12, Article number: 3822 ( 2021)įor two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. The role of chalcogen vacancies for atomic defect emission in MoS 2
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